Effect of n and p-silicon Substrate on Dielectric Constant, Dielectric Loss Tangent of PPy-MWCNTs/TiO2/Al2O3 Structure

Abstract Synthesized these novel structures PPy-MWCNTs/TiO2/Al2O3/p-Si and PPy-MWCNTs/TiO2/Al2O3/n- for using in manufactures diodes, sensor, supercapacitors, electronic devices. The effect of silicon substrate type on electrical dielectric parameters such as constant ɛ`, loss tangent tanδ, Cole –Cole diagram, the width depletion layer (Wd), barrier height (Φb), density state surface (NSS) series resistance (Rs) Au/PPy-MWCNTs/TiO2/Al2O3 were discussed this work. Researchers frequently alter composite ratio to increase characteristics; however, study, we use a different approach by altering improve electric properties structure. sign magnitude ɛ` tanδ are affected substrate, example, at frequency 2 × 10 7 Hz, structure p-Si has both positive negative value range (-3500 200), whereas n-Si exclusively values (-280 -220). On other hand, same frequency, (-2 8) p-Si, whilst (0.78 0.83). At f = ranging from (0 900) while n-Si, (-500 1500).